C3896 PDF Datasheet
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Description
This is NPN Transistor - 2SC3896. Ordering number:EN4097
NPN Triple Diffused Planar Silicon Transistor
2SC3896
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High reliability (Adoption of HVP process).
· High breakdown voltage (VCBO=1500V). · Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC3896]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat)
VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC.