C3086 PDF Datasheet
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Description
This is NPN Transistor - 2SC3086. Ordering number:EN1010B
NPN Triple Diffused Planar Silicon Transistor
2SC3086
500V, 3A Switching Regulator Applications
Features
· High breakdown voltage (VCBO≥800V). · Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2010C
[2SC3086]
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation
VCBO VCEO VEBO
IC ICP IB PC
PW≤300 s, Duty Cycle≤10% Tc=25˚C
800 500
7 3 6 1 1.75 40
Junction Temperature
Tj
150
Storage Temperature
Tstg
55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings min typ max
Collector Cutoff Current
ICBO VCB=500V, IE=0
Emitter Cutoff Current DC Current Gain
IEBO hFE1 hFE2
VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A
15* 8
Collector-to-Emitter .