C3070 PDF Datasheet


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Description

This is NPN Transistor - 2SC3070. Ordering number:EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency, general-purpose amplifier., various drivers, muting circuit. Package Dimensions unit:mm 2006A [2SC3070] Features · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=1.2A). · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions B : Base C : Collector E : Emitter SANYO : MP Ratings 30 25 15 1.2 2 240 1 150 55 to +150 Unit V V V A A mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emi.