C2026 PDF Datasheet
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Description
This is NPN Transistor - 2SC2026. INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC2026
DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MH- ·High Power Gain Gpe= 15dB TYP. @ f= 500MH- ·High Gain Bandwidth Product fT= 2.0GH- TYP.
APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
14
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
PC
Collector Power Dissipation @TC=25℃
0.25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2026
TYP.
MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1
μA
IEBO
Emitter Cutoff Current
VEB=.