BUZ93 PDF Datasheet
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Description
This is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated). BUZ 93
SIPMOS ® Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 93
VDS
600 V
ID
3.6 A
RDS(on)
2.5 Ω
Package TO-220 AB
Ordering Code C67078-S1343-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 3.6 Unit A
ID IDpuls
14.5
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
3.3 6 mJ
ID = 3.3 A, VDD = 50 V, RGS = 25 Ω L = 37 mH, Tj = 25 °C
Gate source voltage Power dissipation 220
VGS Ptot
± 20 80
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 1.56 75 E 55 , 150 , 56
°C K, W
1
07, 96
BUZ 93
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter .