BUZ91A PDF Datasheet
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Description
This is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated). BUZ 91 A
SIPMOS ® Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 91 A
VDS
600 V
ID
8A
RDS(on)
0.9 Ω
Package TO-220 AB
Ordering Code C67078-S1342-A3
Maximum Ratings Parameter Continuous drain current Symbol Values 8 Unit A
ID IDpuls
32
TC = 33 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
8 13 mJ
ID = 8 A, VDD = 50 V, RGS = 25 Ω L = 16.3 mH, Tj = 25 °C
Gate source voltage Power dissipation 570
VGS Ptot
± 20 150
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 0.83 75 E 55 , 150 , 56
°C K, W
1
07, 96
BUZ 91 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter S.