BUZ90A PDF Datasheet
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Description
This is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated). BUZ 90 A
SIPMOS ® Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 90 A
VDS
600 V
ID
4A
RDS(on)
2Ω
Package TO-220 AB
Ordering Code C67078-S1321-A3
Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A
ID IDpuls
16
TC = 30 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
4.5 8 mJ
ID = 4.5 A, VDD = 50 V, RGS = 25 Ω L = 29 mH, Tj = 25 °C
Gate source voltage Power dissipation 320
VGS Ptot
± 20 75
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 , 150 , 56
°C K, W
1
07, 96
BUZ 90 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symb.