BUZ78 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated). BUZ 78
SIPMOS ® Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 78
VDS
800 V
ID
1.5 A
RDS(on)
8Ω
Package TO-220 AB
Ordering Code C67078-S1318-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 1.5 Unit A
ID IDpuls
6
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
1.5 5 mJ
ID = 1.5 A, VDD = 50 V, RGS = 25 Ω L = 142 mH, Tj = 25 °C
Gate source voltage Power dissipation 170
VGS Ptot
± 20 40
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 3.1 75 E 55 , 150 , 56
°C K, W
1
07, 96
BUZ 78
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol.