BUZ73A PDF Datasheet
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Description
This is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated). BUZ 73 A
SIPMOS ® Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 73 A
VDS
200 V
ID
5.5 A
RDS(on)
0.6 Ω
Package TO-220 AB
Ordering Code C67078-S1317-A3
Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A
ID IDpuls
22
TC = 37 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
7 6.5 mJ
ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 °C
Gate source voltage Power dissipation 120
VGS Ptot
± 20 40
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 3.1 75 E 55 , 150 , 56
°C K, W
1
07, 96
BUZ 73 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Paramet.