BUV50 PDF Datasheet
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Description
This is SILICON POWER TRANSISTOR. SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV50
DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·Suitable for use in clocked voltatge converters
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Tmb-25 CONDITIONS Open emitter Open base Open collector VALUE 250 125 7 25 50 6 12 150 150 -65~200 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.17 UNIT , W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise s.