BUK9506-55B PDF Datasheet
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Description
This is N-channel TrenchMOSTM logic level FET.
BUK95, 96, 9E06-55B
N-channel TrenchMOS™ logic level FET
Rev. 03 30 November 2004 Product data sheet
1. Product pro le
1.1 General description
N-channel enhancement mode eld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.
1.2 Features
s TrenchMOS™ technology s 175 °C rated s Q101 compliant s Logic level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 679 mJ s ID ≤ 75 A s RDSon = 5.1 mΩ (typ) s Ptot ≤ 258 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain (D)
123
3
[1]
Simpli ed outline
mb mb
Symbol
mb
D
G
mbb076
S
2 1 1 2 3
SOT226 (I2-PAK)
SOT404 (D2-PAK)
SOT78 (TO-220AB)
[1] It is not possible to make a connection to pin 2 of the SOT404 pac.