BSS84DW PDF Datasheet
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Description
This is DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. BSS84DW
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
· · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
SOT-363
A
D2 G1 S1
Dim A B
B C
Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25
· · · · · ·
Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: KXX: Product marking code YY: Date code Marking Code: K84 Weight: 0.006 grams (approx.)
K
J
D2
S2
Maximum Ratings
Drain-Source Voltage Drain-Gate Voltage (Note 3) Gate-Source Voltage Drain Current (Note 1)
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS84DW -50 -50 ±20 -130 200 625 -55 to +150 Units V V V mA mW °C, W °C
Characteristic
Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Note: 1. Valid provided that terminals are kept.