BSS84AKM PDF Datasheet
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Description
This is 230 mA P-channel Trench MOSFET. BSS84AKM
SO T8 83
50 V, 230 mA P-channel Trench MOSFET
Rev. 1 23 May 2011 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 1 kV AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -10 V; Tamb = 25 °C VGS = -10 V; ID = -100 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20 -
Typ 4.5
Max Unit -50 20 V V
-230 mA 7.5 Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad f.