BSS149 PDF Datasheet
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Description
This is SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance). SIPMOS® Small-Signal Transistor
BSS 149
q q q q q q q
VDS 200 V ID 0.35 A RDS(on) 3.5 Ω
N channel Depletion mode High dynamic resistance Available grouped in VGS(th)
1
2
3
Type
Ordering Code
Tape and Reel Information E6325: 2000 pcs, carton; Ammopack
Pin Configuration Marking Package 1 G 2 D 3 S SS149 TO-92
BSS 149 Q67000-S252
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 34 ˚C Pulsed drain current, Max. power dissipation, Symbol Values 200 200 ± 14 ± 20 0.35 1.05 1.0 55 … + 150 ≤ 125 E 55, 150, 56 W ˚C K, W A Unit V
VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA
TA = 25 ˚C TA = 25 ˚C
Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
1
04.97
BSS 149
Electrical Characteristics at Tj = 25 ˚C, unless otherwise s.