BSS138DW PDF Datasheet


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Description

This is DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed SOT-363 A D2 G1 S1 Dim A B B C Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 · · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: KXX: Product marking code YY: Date code Marking Code: K38 Weight: 0.006 grams (approx.) K J Maximum Ratings Drain-Source Voltage Drain-Gate Voltage (Note 3) Gate-Source Voltage Drain Current (Note 1) @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS138DW 50 50 ±20 200 200 625 -55 to +150 Units V V V mA mW °C, W °C Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERI.