BSS138 PDF Datasheet

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Description

This is N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET. SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 MARCH 1996 PARTMARKING DETAIL 7 SS BSS138 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 50 200 800 ± 20 360 -55 to +150 SOT23 UNIT V mA mA V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS 50 0.5 1.5 100 0.5 5 100 3.5 120 50 25 8 10 10 15 25 MIN. MAX. UNIT CONDITIONS. V V nA A A nA Ω.