BSS123 PDF Datasheet
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Description
This is 100V, 150mA, N-channel enhancement mode vertical D-MOS transistor. DISCRETE SEMICONDUCTORS
DATA SHEET
BSS123 N-channel enhancement mode vertical D-MOS transistor
Product speci cation File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product speci cation
N-channel enhancement mode vertical D-MOS transistor
FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN 1 2 3 gate source drain
Marking: SA. 1 Top view 2
MBB076 - 1 MSB003
BSS123
QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance DC value ID = 120 mA VGS = 10 V CONDITIONS MAX. 100 150 6 2.8 UNIT V mA Ω V
gate-source threshold voltage ID = 1 mA VGS = VDS
PIN CONFIGURATION
ndbook, halfpage
3
handbook, 2 columns
.