BSO300N03S PDF Datasheet

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Description

This is OptiMOS2 Power-Transistor. BSO300N03S OptiMOS®2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC, DC Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated dv , dt rated 1 Product Summary V DS R DS(on),max ID 30 30 7.2 V mΩ A P-DSO-8 Type BSO300N03S Package P-DSO-8 Ordering Code Q67042-S4205 Marking 300N3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 °C2) T A=70 °C2) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C3) I D=7.2 A, R GS=25 Ω I D=7.2 A, V DS=20 V, di , dt =200 A, s, T j,max=150 °C 7.2 5.8 29 10 mJ steady state 5.7 4.6 A Unit Reverse diode dv , dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 dv , dt V GS P tot T j, T stg 6 ±20 kV, s V .