BLV25 PDF Datasheet
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Description
This is VHF power transistor. DISCRETE SEMICONDUCTORS
DATA SHEET
BLV25 VHF power transistor
Product speci cation August 1986
Philips Semiconductors
Product speci cation
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. FEATURES internally matched input for wideband operation and high power gain; multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; gold-metallization ensures excellent reliability. The transistor has a 1 2in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit. MODE OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 28 f MH- 108 PL W 175 PS W < 17,5 Gp dB > 10,0 PINNING PIN 1
handbook, halfpage
BLV25
η % > 65
DESCRIPTION emitter emitter base collector emitter emitter
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outli.