BLH3355 PDF Datasheet
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Description
This is NPN EPITAXIAL SILICON RF TRANSISTOR CHIP.
BLH3355
NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355)
Description
NPN epitaxial silicon RF transistor for microwave low-noise amplification
Features
Low noise and high gain bandwidth product High power gain
Applications
UHF , VHF wide band amplifier
Structure
Planar type Electrodes: Aluminum alloy Backside metal: Au alloy
Size
Chip size: 370 m ×370 m Chip thickness: 220±20 m. Pad size: φ100 m
ABSOLUTE MAXIMUM RATING
Symbol
VCBO VCEO VEBO IC Ptot Tj Tstg
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Value
20 12 3.0 100 200 150 65 to +150
Unit
V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified
Symbol ICBO IEBO hFE Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test conditions VCB=10V, IE=0mA VEB=1.0V, IC=0mA VCE =10V, IC=20mA Min. 50 Typ. 120 Max. 1.0 1.0 250 Unit A .