BLF246 PDF Datasheet


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Description

This is VHF power MOS transistor. DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product speci cation Supersedes data of September 1992 1996 Oct 21 Philips Semiconductors Product speci cation VHF power MOS transistor FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch. APPLICATIONS Large signal amplifier applications in the VHF frequency range. handbook, halfpage BLF246 PINNING - SOT121 PIN 1 2 3 4 SYMBOL d s g s DESCRIPTION drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information. 2 3 d g s MAM267 CAUTION The device is supplied in an antistatic package. The gate-source input must be pr.