BLF245 PDF Datasheet
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Description
This is VHF power MOS transistor. DISCRETE SEMICONDUCTORS
DATA SHEET
BLF245 VHF power MOS transistor
Product speci cation September 1992
Philips Semiconductors
Product speci cation
VHF power MOS transistor
FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch.
g
MBB072
BLF245
PIN CONFIGURATION
lfpage
1
4 d
s
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION
2 3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmenta.