BFQ17 PDF Datasheet
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Description
This is NPN 1 GHz wideband transistor. DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ17 NPN 1 GH- wideband transistor
Product speci cation File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product speci cation
NPN 1 GH- wideband transistor
DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain. PINNING PIN 1 2 3 DESCRIPTION Code: FA emitter collector base
1 Bottom view 2
page
BFQ17
3
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot fT Cre PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation transition frequency feedback capacitance up to Ts = 145 °C (note 1) IC = 150 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C IC = 10 mA; VCE = 15 V; f = 1 MHz; Tamb = 25 °C open base CONDITIONS open emitter TYP. MAX. UNIT 1.5 1.9 40 25 300 1 V V mA W GH- pF
LIMITING VALUES In accordance with th.