BF998 PDF Datasheet
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Description
This is Silicon N-channel dual-gate MOS-FETs. DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R Silicon N-channel dual-gate MOS-FETs
Product specification Supersedes data of April 1991
1996 Aug 01
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
FEATURES Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic microminiature SOT143B or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
handbook, halfpage
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3
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