BF1009 PDF Datasheet
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Description
This is Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network. BF 1009
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GH- Operating voltage 9 V Integrated stabilized bias network
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1009
Marking Ordering Code Pin Configuration JKs Q62702-F1613 1 = S 2=D
Package
3 = G2 4 = G1 SOT-143
Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1, gate 2 peak source current Gate 1 (external biasing) Total power dissipation , T S ≤ 76 °C0 Storage temperature Channel temperature Symbol Value 12 25 10 3 200 -55 ...+150 150 V mW °C Unit V mA
VDS ID
±IG1, 2SM +VG1SE
Ptot Tstg Tch
Thermal Resistance Channel - soldering point
Rthchs
≤370
K, W
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group Semiconductor Group
11
Sep-09-1998 1998-11-01
BF 1009
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values P.