BDX54C PDF Datasheet
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Description
This is COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS. BDX53B - BDX53C BDX54B - BDX54C
Complementary power Darlington transistors
Features
- Good hFE linearity - High fT frequency - Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
- Audio amplifiers - Linear and switching industrial equipment
Description
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order code BDX53B BDX53C BDX54B BDX54C
Marking BDX53B BDX53C BDX54B BDX54C
R1 typ.= 10 kΩ
R2 typ.= 150 Ω
Package TO-220
Packaging Tube
October 2007
Rev 4
1, 7
www.st.com
7
Electrical ratings
1 Electrical ratings
BDX53B - BDX53C - BDX54B - BDX54C
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
NPN
VCBO VCEO VEBO
IC ICM IB PTOT Tstg TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (repetitive) Ba.