BDX33B PDF Datasheet
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Description
This is Darlington Complementary Silicon Power Transistors. MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDX33B, D
Darlington Complementary Silicon Power Transistors
. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) BDX33C, 34C Low Collector Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C, 34B, 34C Monolithic Construction with Build In Base Emitter Shunt resistors TO 220AB Compact Package MAXIMUM RATINGS
BDX33B BDX33C* BDX34B * BDX34C
*Motorola Preferred Device
NPN
PNP
.