BD230 PDF Datenblatt
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Beschreibung
This is NPN power transistor. DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD230 NPN power transistor
Product speci cation Supersedes data of 1997 Mar 06 1999 Apr 21
Philips Semiconductors
Product speci cation
NPN power transistor
FEATURES High current (max. 1.5 A) Low voltage (max. 80 V). APPLICATIONS Driver stages in television circuits. DESCRIPTION
handbook, halfpage
BD230
PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD231.
3
2
1
1
2
3
Top view
MAM254
Fig.1
Simplified outline (TO-126; SOT32) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambie.