BC856 PDF Datasheet
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Description
This is PNP EPITAXIAL SILICON TRANSISTOR. BC856- BC860 PNP Epitaxial Silicon Transistor
BC856- BC860
PNP Epitaxial Silicon Transistor
Features
Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC859, BC860 Complement to BC846 ... BC850
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BC856 : BC857, 860 : BC858, 859
VCEO
Collector-Emitter Voltage : BC856 : BC857, 860 : BC858, 859
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO hFE VCE (sat)
VBE (sat)
VBE (on)
fT
Collector Cut-off Current
VCB= -30V, IE=0
DC Current Gain
VCE= -5V, IC= -2mA
Collector-Emitter Saturation Voltage IC= -10mA, IB= .