BC813C PDF Datasheet
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Description
This is PNP Epitaxial Silicon Transistor. BC318C PNP Epitaxial Silicon Transistor
September 2007
BC318C PNP Epitaxial Silicon Transistor
This device is designed for general purpose amplifier application at collector currents to 800mA. Sourced from process 38.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO VCEO VEBO IC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Operating and Storage Junction Temperature Range
Parameter
Value
30 20 5 100 -55 ~ 150
Units
V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
Ta=25°C unless otherwise noted
Parameter
Total Device Dissipatio.