BC556 PDF Datasheet
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Description
This is Amplifier Transistors. MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC556, D
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC556,B BC557A,B,C BC558B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 556 65 80 BC 557 45 50 5.0 100 625 5.0 1.5 12 55 to +150 BC 558 30 30 Unit Vdc Vdc Vdc mAdc mW mW, °C Watt mW, °C °C
1 2 3
CASE 29 04, STYLE 17 TO 92 (TO 226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C, W °C, W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = .