BC546B PDF Datasheet
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Description
This is NPN Silicon Amplifier Transistor 625mW. MCC
omponents 21201 Itasca Street Chatsworth
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Features
l Through Hole Package l 150oC Junction Temperature
Pin Configuration Bottom View
CB E
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Collector-Emitter Voltage
Collector-Base Voltage
Symbol
BC546 BC547 VCEO BC548 BC546 BC547 VCBO BC548
Value 65 45 30 80 50 30
Unit V
V
Emitter-Base Voltage Collector Current(DC)
Power Dissipation@TA=25oC
Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air
VEBO IC Pd
Pd
RqJA
6.0 V
100 mA 625 mW 5.0 mW, oC 1.5 W 12 mW, oC
200 oC, W
Thermal Resistance, Junction to Case
RqJC 83.3 oC, W
Operating & Storage Temperature Tj, TSTG -55~150 oC
BC546,B BC547,A,B,C BC548,A,B,C
NPN Silicon Amplifier Transistor
625mW
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .175 .185
B .175 .185
C .500
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