BC546 PDF Datasheet
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Description
This is Amplifier Transistors. MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC546, D
Amplifier Transistors
NPN Silicon
COLLECTOR 1
BC546, B BC547, A, B, C BC548, A, B, C
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
BC BC BC Symbol 546 547 548 Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
65 45 30 Vdc 80 50 30 Vdc
6.0 Vdc 100 mAdc 625 mW 5.0 mW, °C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watt 12 mW, °C
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C, W
Thermal Resistance, Junction to Case
RqJC
83.3 °C, W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
BC546 BC547 BC5.