BC327 PDF Datasheet
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Description
This is Amplifier Transistors(PNP). MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC327, D
Amplifier Transistors
PNP Silicon
COLLECTOR 1
BC327,-16,-25 BC328,-16,-25
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC327 BC328 Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
45 25 50 30
5.0 800 625 5.0
Vdc Vdc Vdc mAdc mW mW, °C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watt 12 mW, °C
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C, W
Thermal Resistance, Junction to Case
RqJC
83.3 °C, W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
BC327 BC328
V(BR)CEO
Collector .