BAW56WT1 PDF Datasheet


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Description

This is Dual Switching Diode. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAW56WT1, D Dual Switching Diode CATHODE 1 3 ANODE 2 BAW56WT1 Motorola Preferred Device MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc 1 2 3 CASE 419 02, STYLE 4 SC 70, SOT 323 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 0.625 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW, °C °C, W mW mW, °C °C, W °C DEVICE MARKING A1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C).