BAV199DW PDF Datasheet
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Description
This is Multi-Chip DIODES.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAV199DW
FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Multi-Chip DIODES
SOT-363
Collector current IF : 200 mA Collector-base voltage VR : 85 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ MARKING:K52
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR
unless
otherwise
specified)
MIN 85 5 0.9 1.0 1.1 1.25 TYP MAX UNIT V nA
Test
conditions
IR= 100 A VR=75V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V f=1MHz
Forward voltage
VF
V
Junction capacitance
Cj
2
pF
IF=IR=10mA Reveres recovery time trr Irr=0.1ХIR RL=100Ω 3 nS
Typical Characteristics
BAV199DW
.