BAQ35 PDF Datasheet
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Description
This is Silicon Planar Diodes. BAQ33...BAQ35
Vishay Telefunken
Silicon Planar Diodes
Features
D Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers
94 9371
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g Test Conditions Type BAQ33 BAQ34 BAQ35 Symbol VR VR VR IFSM IF Tj Tstg Value 30 60 125 2 200 200 65...+200 Unit V V V A mA °C °C
Peak forward surge current Forward current Junction temperature Storage temperature range
tp=1ms
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K, W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=100mA E 300lx, VR E 300lx, VR, Tj=125°C E 300lx, VR=15V E 300lx, VR=30V E 300lx, VR=60V IR=5mA, tp, T=0.01, tp=0.3ms Type Symbol VF IR IR IR IR IR V(BR) V(BR) V(BR) CD Min Typ 1 0.5 0.5 0.5 40 70 140 3 Max 1 3 0.5 1 1 1 Unit V nA mA nA nA nA V V V pF
Breakdown vo.