BAQ333 PDF Datasheet


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Description

This is Silicon Planar Diodes. BAQ333...BAQ335 Vishay Telefunken Silicon Planar Diodes Features D D D D Saving space Hermetic sealed parts Fits onto SOD 323 , SOT 23 footprints Electrical data identical with the devices BAQ33...BAQ35 , BAQ133...BAQ135 96 12315 D Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Test Conditions Type BAQ333 BAQ334 BAQ335 Symbol VR VR VR IFSM IF Tj Tstg Value 30 60 125 2 200 200 65...+200 Unit V V V A mA °C °C Peak forward surge current Forward current Junction temperature Storage temperature range tp=1ms Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions mounted on epoxy glass hard tissue, Fig. 1 35mm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Value 500 Unit K, W Document Number 85538 Rev. 2, 01-April-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) BAQ333...BAQ335 Vishay Telefunken Electr.