AT28C010 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is 1-Megabit (128K x 8) Paged Parallel EEPROM. Features
Fast Read Access Time - 120 ns Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation Low Power Dissipation 80 mA Active Current 300 A CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology Endurance: 104 or 105 Cycles Data Retention: 10 Years Single 5V 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-Wide Pinout
AT28C010 Mil
1-Megabit (128K x 8) Paged Parallel EEPROMs
AT28C010 Military
Pin Configuration
Pin Name
Function
A0 - A16
Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I, O0 - I, O7
Data Inputs, Outputs
NC No Connect
CERDIP, FLATPACK Top View
44 LCC Top View
NC A16 A15 A12
A7 A6 A5 A4 A3 A2 A1 A0 I, O0 I, O1 I, O2 GND
1 2 3 4 5 6 .