AP9962GH PDF Datasheet
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Description
This is Power MOSFET ( Transistor ). AP9962GH, J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
40V 20mΩ 32A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC, DC converters. The through-hole version (AP9962GJ) are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 40 ±20 32 20 150 34.7 0.27 -55 to 150 -55 to 150
Units V.