AP4953GM PDF Datasheet
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Description
This is P-CHANNEL ENHANCEMENT MODE POWER MOSFET.
AP4953GM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching
D1 G2 S2 D2 D1 D2
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 53mΩ -5A
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC, DC converters.
G1
D1
D2
G2 S1 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating - 30 ±20 -5 -4 - 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W, ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Ope.