AP18T10AGH-HF-3 PDF Datasheet
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Description
This is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Advanced Power Electronics Corp.
AP18T10AGH-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
100V 160mΩ 9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP18T10GAH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC, DC converters.
G
D
S
TO-252 (H)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 100 ±20 9 5.6 30 28 2 -55 to 150 -55 to 150
Units V V A A A W W °C °C
Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature .