AO4914 PDF Datasheet
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Description
This is Dual N-Channel Enhancement Mode Field Effect Transistor. Rev 6: May 2005
AO4914 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further AO4914 is Pb-free (meets ROHS & Sony 259 specifications). AO4914L is a Green Product ordering option. AO4914 and AO4914L are electrically identical.
Features Q1
VDS (V) = 30V ID = 8.5A RDS(ON) < 18mΩ RDS(ON) < 28mΩ
Q2
VDS(V) = 30V ID = 8.5A <18mΩ (VGS = 10V) <28mΩ (VGS = 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
S2, A G2 S1 G1
1 2 3 4
8 7 6 5
D2, K D2, K D1 D1
Q1
D2 K
D1
Q2
SOIC-8
G2 S2
A
G1 S1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous.