AO4466 PDF Datasheet
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Description
This is N-Channel Enhancement Mode Field Effect Transistor. AO4466
30V N-Channel MOSFET
General Description
The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
* RoHS and Halogen-Free Compliant
Product Summary
VDS (V) = 30V ID = 10A RDS(ON) < 23mΩ RDS(ON) < 35mΩ
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C
Power Dissipation TA=70°C Avalanche Current B, G Repetitive avalanche energy 0.1mH B, G
PD
IAR EAR
Junction and Storage Temperature Range TJ, TSTG
G
Maximum 30 ±20 10 7 64 3.1 2 12 7
-55 to 150
S
Thermal Characte.