AM29DL800B PDF Datasheet


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Description

This is 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash Memory. PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit, 512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read, Write operations Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program s Single power supply operation Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications s Manufactured on 0.35 m process technology Compatible with 0.5 m Am29DL800 device s High performance Access times as fast as 70 ns s Low current consumption (typical values at 5 MHz) 7 mA active read current 21 mA active read-while-program or read-whileerase current 17 mA active program-while-erase-suspended current 200 nA in standby mode 200 nA in automatic sleep mode Standard tCE chip enable access time applies to transition from automatic sleep mode to active m.