50N60 PDF Datasheet
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Description
This is IXRH50N60. Advanced Technical Information
IGBT with Reverse Blocking capability
IXRH 50N80 IXRH 50N60
VCES = 600 , 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns
TO-247 AD
G C E
C G
C (TAB) C = Collector, TAB = Collector
E G = Gate, E = Emitter,
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0, 15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 H TC = 25°C Conditions TVJ = 25°C to 150°C IXRH 50N80 IXRH 50N60 Maximum Ratings ±800 ±600 ± 20 60 40 80 500 300 V V V A A
Features
q
q
q
A V W
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IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum current distribution when paralleled Epoxy of TO 247 package meets UL 94V-0
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 3.0 4.