33N25 PDF Datenblatt
Please enter the part number you wish to PDF download in the search bar.
Geben Sie bitte die Teilenummer des gewünschten PDF-Downloads in die Suchleiste ein.
Beschreibung
This is FDB33N25. FDB33N25 250V N-Channel MOSFET
September 2005
UniFET
FDB33N25
250V N-Channel MOSFET Features
33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching 100% avalanche tested Improved dv, dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
D
{
z
G{
- z
{
G
S
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv, dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche En.