2SK3639 PDF Datasheet
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Description
This is SWITCHING N-CHANNEL POWER MOSFET. DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3639
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC, DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3639-ZK PACKAGE TO-252 (MP-3ZK)
(TO-252)
FEATURES
Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A) Low Ciss: Ciss = 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
20 ±20 ±64 ±256 40 1.0 150 55 to +150
V V A A W W °C °C
Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 s, Duty Cycle ≤ 1%
The inf.