2SK3570 PDF Datasheet

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Description

This is Switching N-Channel Power MOS FET. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC, DC converter with synchronous rectifier. 5 ORDERING INFORMATION PART NUMBER 2SK3570 2SK3570-S 2SK3570-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES 4.5V drive available. Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available 2SK3570-Z Note TO-220SMD package is produced only in Japan. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±48 ±160 1.5 29 150 55 to +150 V V A A W W °C.