2SK3435-Z PDF Datasheet
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Description
This is SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE. PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3435 2SK3435-S 2SK3435-Z PACKAGE TO-220AB TO-262 TO-220SMD
DESCRIPTION
The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) Built-in gate protection diode 5 Low Ciss: Ciss = 3200 pF TYP.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
Note2 Note2
60 ±20 ±80 ±320 84 1.5 150 55 to +150 31 96
V V A A W W °C °C A mJ
(TO-262)
5 Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature
5 5
Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW ≤ 1.